IndiumV3, Main, Repository, bibRecord, 001596

Room-Temperature Terahertz Detectors Based on Semiconductor Nanowire Field-Effect Transistors

Identifieur interne : 001596 ( Main/Repository ); précédent : 001595; suivant : 001597

Room-Temperature Terahertz Detectors Based on Semiconductor Nanowire Field-Effect Transistors

Auteurs : RBID : Pascal:12-0099984

Descripteurs français

Pascal (Inist)
- Domaine fréquence THz, Détecteur, Semiconducteur III-V, Nanoélectronique, Croissance semiconducteur, Nanofil, Nanomatériau, Silicium, Diode électroluminescente, Dispositif optoélectronique, Dispositif photovoltaïque, Photodétecteur, Transistor effet champ, Masse effective, Tellurure de gallium, Composé III-V, Arséniure d'indium, Synthèse nanomatériau, Epitaxie phase vapeur, Dopage, Sélénium, Densité charge, Résistance contact, Effet non linéaire, Electrode commande, Réseau(arrangement), Si, InAs, 0707D, 8535, 8107V, 8107B.
Wicri :
- concept : Dopage.

English descriptors

KwdEn :
- Arrays, Charge density, Contact resistance, Detectors, Doping, Effective mass, Field effect transistors, Gallium tellurides, Gates, III-V compound, III-V semiconductors, Indium arsenides, Light emitting diodes, Nanoelectronics, Nanomaterial synthesis, Nanostructured materials, Nanowires, Non linear effect, Optoelectronic devices, Photodetectors, Photovoltaic cell, Selenium, Semiconductor growth, Silicon, THz range, VPE.

Abstract

The growth of semiconductor nanowires (NWs) has recently opened new paths to silicon integration of device families such as light-emitting diodes, high-efficiency photovoltaics, or high-responsivity photodetectors. It is also offering a wealth of new approaches for the development of a future generation of nanoelectronic devices. Here we demonstrate that semiconductor nanowires can also be used as building blocks for the realization of high-sensitivity terahertz detectors based on a 1D field-effect transistor configuration. In order to take advantage of the low effective mass and high mobilities achievable in III-V compounds, we have used InAs nanowires, grown by vapor-phase epitaxy, and properly doped with selenium to control the charge density and to optimize source-drain and contact resistance. The detection mechanism exploits the nonlinearity of the transfer characteristics: the terahertz radiation field is fed at the gate-source electrodes with wide band antennas, and the rectified signal is then read at the output in the form of a DC drain voltage. Significant responsivity values (>1 V/W) at 0.3 THz have been obtained with noise equivalent powers (NEP) < 2 × 10^-9 W/(Hz)^1/2 at room temperature. The large existing margins for technology improvements, the scalability to higher frequencies, and the possibility of realizing multipixel arrays, make these devices highly competitive as a future solution for terahertz detection.

Links toward previous steps (curation, corpus...)

to stream Main, to step Corpus: 002166

Links to Exploration step

Pascal:12-0099984

Le document en format XML

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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Arrays</term>
<term>Charge density</term>
<term>Contact resistance</term>
<term>Detectors</term>
<term>Doping</term>
<term>Effective mass</term>
<term>Field effect transistors</term>
<term>Gallium tellurides</term>
<term>Gates</term>
<term>III-V compound</term>
<term>III-V semiconductors</term>
<term>Indium arsenides</term>
<term>Light emitting diodes</term>
<term>Nanoelectronics</term>
<term>Nanomaterial synthesis</term>
<term>Nanostructured materials</term>
<term>Nanowires</term>
<term>Non linear effect</term>
<term>Optoelectronic devices</term>
<term>Photodetectors</term>
<term>Photovoltaic cell</term>
<term>Selenium</term>
<term>Semiconductor growth</term>
<term>Silicon</term>
<term>THz range</term>
<term>VPE</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Domaine fréquence THz</term>
<term>Détecteur</term>
<term>Semiconducteur III-V</term>
<term>Nanoélectronique</term>
<term>Croissance semiconducteur</term>
<term>Nanofil</term>
<term>Nanomatériau</term>
<term>Silicium</term>
<term>Diode électroluminescente</term>
<term>Dispositif optoélectronique</term>
<term>Dispositif photovoltaïque</term>
<term>Photodétecteur</term>
<term>Transistor effet champ</term>
<term>Masse effective</term>
<term>Tellurure de gallium</term>
<term>Composé III-V</term>
<term>Arséniure d'indium</term>
<term>Synthèse nanomatériau</term>
<term>Epitaxie phase vapeur</term>
<term>Dopage</term>
<term>Sélénium</term>
<term>Densité charge</term>
<term>Résistance contact</term>
<term>Effet non linéaire</term>
<term>Electrode commande</term>
<term>Réseau(arrangement)</term>
<term>Si</term>
<term>InAs</term>
<term>0707D</term>
<term>8535</term>
<term>8107V</term>
<term>8107B</term>
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<keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Dopage</term>
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<front><div type="abstract" xml:lang="en">The growth of semiconductor nanowires (NWs) has recently opened new paths to silicon integration of device families such as light-emitting diodes, high-efficiency photovoltaics, or high-responsivity photodetectors. It is also offering a wealth of new approaches for the development of a future generation of nanoelectronic devices. Here we demonstrate that semiconductor nanowires can also be used as building blocks for the realization of high-sensitivity terahertz detectors based on a 1D field-effect transistor configuration. In order to take advantage of the low effective mass and high mobilities achievable in III-V compounds, we have used InAs nanowires, grown by vapor-phase epitaxy, and properly doped with selenium to control the charge density and to optimize source-drain and contact resistance. The detection mechanism exploits the nonlinearity of the transfer characteristics: the terahertz radiation field is fed at the gate-source electrodes with wide band antennas, and the rectified signal is then read at the output in the form of a DC drain voltage. Significant responsivity values (>1 V/W) at 0.3 THz have been obtained with noise equivalent powers (NEP) < 2 × 10<sup>-9</sup>
 W/(Hz)<sup>1/2</sup>
 at room temperature. The large existing margins for technology improvements, the scalability to higher frequencies, and the possibility of realizing multipixel arrays, make these devices highly competitive as a future solution for terahertz detection.</div>
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<fC01 i1="01" l="ENG"><s0>The growth of semiconductor nanowires (NWs) has recently opened new paths to silicon integration of device families such as light-emitting diodes, high-efficiency photovoltaics, or high-responsivity photodetectors. It is also offering a wealth of new approaches for the development of a future generation of nanoelectronic devices. Here we demonstrate that semiconductor nanowires can also be used as building blocks for the realization of high-sensitivity terahertz detectors based on a 1D field-effect transistor configuration. In order to take advantage of the low effective mass and high mobilities achievable in III-V compounds, we have used InAs nanowires, grown by vapor-phase epitaxy, and properly doped with selenium to control the charge density and to optimize source-drain and contact resistance. The detection mechanism exploits the nonlinearity of the transfer characteristics: the terahertz radiation field is fed at the gate-source electrodes with wide band antennas, and the rectified signal is then read at the output in the form of a DC drain voltage. Significant responsivity values (>1 V/W) at 0.3 THz have been obtained with noise equivalent powers (NEP) < 2 × 10<sup>-9</sup>
 W/(Hz)<sup>1/2</sup>
 at room temperature. The large existing margins for technology improvements, the scalability to higher frequencies, and the possibility of realizing multipixel arrays, make these devices highly competitive as a future solution for terahertz detection.</s0>
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<s2>NK</s2>
<s5>15</s5>
</fC03>
<fC03 i1="15" i2="3" l="ENG"><s0>Gallium tellurides</s0>
<s2>NK</s2>
<s5>15</s5>
</fC03>
<fC03 i1="16" i2="X" l="FRE"><s0>Composé III-V</s0>
<s5>29</s5>
</fC03>
<fC03 i1="16" i2="X" l="ENG"><s0>III-V compound</s0>
<s5>29</s5>
</fC03>
<fC03 i1="16" i2="X" l="SPA"><s0>Compuesto III-V</s0>
<s5>29</s5>
</fC03>
<fC03 i1="17" i2="3" l="FRE"><s0>Arséniure d'indium</s0>
<s2>NK</s2>
<s5>30</s5>
</fC03>
<fC03 i1="17" i2="3" l="ENG"><s0>Indium arsenides</s0>
<s2>NK</s2>
<s5>30</s5>
</fC03>
<fC03 i1="18" i2="X" l="FRE"><s0>Synthèse nanomatériau</s0>
<s5>31</s5>
</fC03>
<fC03 i1="18" i2="X" l="ENG"><s0>Nanomaterial synthesis</s0>
<s5>31</s5>
</fC03>
<fC03 i1="18" i2="X" l="SPA"><s0>Síntesis nanomaterial</s0>
<s5>31</s5>
</fC03>
<fC03 i1="19" i2="3" l="FRE"><s0>Epitaxie phase vapeur</s0>
<s5>32</s5>
</fC03>
<fC03 i1="19" i2="3" l="ENG"><s0>VPE</s0>
<s5>32</s5>
</fC03>
<fC03 i1="20" i2="X" l="FRE"><s0>Dopage</s0>
<s5>33</s5>
</fC03>
<fC03 i1="20" i2="X" l="ENG"><s0>Doping</s0>
<s5>33</s5>
</fC03>
<fC03 i1="20" i2="X" l="SPA"><s0>Doping</s0>
<s5>33</s5>
</fC03>
<fC03 i1="21" i2="3" l="FRE"><s0>Sélénium</s0>
<s2>NC</s2>
<s5>34</s5>
</fC03>
<fC03 i1="21" i2="3" l="ENG"><s0>Selenium</s0>
<s2>NC</s2>
<s5>34</s5>
</fC03>
<fC03 i1="22" i2="3" l="FRE"><s0>Densité charge</s0>
<s5>35</s5>
</fC03>
<fC03 i1="22" i2="3" l="ENG"><s0>Charge density</s0>
<s5>35</s5>
</fC03>
<fC03 i1="23" i2="3" l="FRE"><s0>Résistance contact</s0>
<s5>36</s5>
</fC03>
<fC03 i1="23" i2="3" l="ENG"><s0>Contact resistance</s0>
<s5>36</s5>
</fC03>
<fC03 i1="24" i2="X" l="FRE"><s0>Effet non linéaire</s0>
<s5>37</s5>
</fC03>
<fC03 i1="24" i2="X" l="ENG"><s0>Non linear effect</s0>
<s5>37</s5>
</fC03>
<fC03 i1="24" i2="X" l="SPA"><s0>Efecto no lineal</s0>
<s5>37</s5>
</fC03>
<fC03 i1="25" i2="3" l="FRE"><s0>Electrode commande</s0>
<s5>38</s5>
</fC03>
<fC03 i1="25" i2="3" l="ENG"><s0>Gates</s0>
<s5>38</s5>
</fC03>
<fC03 i1="26" i2="3" l="FRE"><s0>Réseau(arrangement)</s0>
<s5>39</s5>
</fC03>
<fC03 i1="26" i2="3" l="ENG"><s0>Arrays</s0>
<s5>39</s5>
</fC03>
<fC03 i1="27" i2="3" l="FRE"><s0>Si</s0>
<s4>INC</s4>
<s5>46</s5>
</fC03>
<fC03 i1="28" i2="3" l="FRE"><s0>InAs</s0>
<s4>INC</s4>
<s5>47</s5>
</fC03>
<fC03 i1="29" i2="3" l="FRE"><s0>0707D</s0>
<s4>INC</s4>
<s5>71</s5>
</fC03>
<fC03 i1="30" i2="3" l="FRE"><s0>8535</s0>
<s4>INC</s4>
<s5>72</s5>
</fC03>
<fC03 i1="31" i2="3" l="FRE"><s0>8107V</s0>
<s4>INC</s4>
<s5>73</s5>
</fC03>
<fC03 i1="32" i2="3" l="FRE"><s0>8107B</s0>
<s4>INC</s4>
<s5>74</s5>
</fC03>
<fN21><s1>079</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
</fN82>
</pA>
</standard>
</inist>
</record>

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   |wiki=   *** parameter Area/wikiCode missing *** 
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   |texte=   Room-Temperature Terahertz Detectors Based on Semiconductor Nanowire Field-Effect Transistors
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Room-Temperature Terahertz Detectors Based on Semiconductor Nanowire Field-Effect Transistors

Room-Temperature Terahertz Detectors Based on Semiconductor Nanowire Field-Effect Transistors

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